aug. 1999 pin configuration mitsubishi semiconductor m54513p/fp 8-unit 50ma transistor array circuit diagram description m54513p and M54513FP are eight-circuit transistor arrays. the circuits are made of npn transistors. both the semicon- ductor integrated circuits perform high-current driving with extremely low input-current supply. features high breakdown voltage (bv ceo 3 40v) synchronizing current (ic(max) = 50ma) wide operating temperature range (ta = C20 to +75 c) application driving of digit drives of indication elements (leds and lamps) with small signals function the m54513p and M54513FP each have eight circuits con- sisting of npn transistors. these ics have resistance of 2 k w at inputs and of 13.6k w between the base and emitter. the gnd is used in common in each circuit. the transistors allow synchronous flow of 50ma collector current. a maximum of 40v voltage can be applied between the collector and emitter. the M54513FP is enclosed in a molded small flat package, enabling space-saving design. 13.6k 2k input output gnd the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w the eight circuits share the gnd. 1 in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? in7 ? ? o8 in8 ? gnd nc nc : no connection nc : no connection 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 ? o7 ? o6 ? o5 ? o4 ? o3 ? o2 ? o1 ? ? ? ? ? ? ? y ? ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? package type 18p4g(p) 1 nc input output input output in1 ? in2 ? in3 ? in4 ? in5 ? in6 ? ? o8 in7 ? in8 ? 2 3 4 5 6 7 8 9 20 19 18 17 16 15 14 13 12 gnd 10 11 ? o7 ? o6 ? o5 ? o4 ? o2 ? o3 ? o1 nc nc ? ? ? ? ? ? ? y ? ? ? ? ? ? ? t ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? package type 20p2n-a(fp)
aug. 1999 mitsubishi semiconductor m54513p/fp 8-unit 50ma transistor array absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) v ma parameter 0 0 2 0 v ma v w c c C0.5 ~ +40 50 C0.5 ~ +10 1.79(p)/1.10(fp) C20 ~ +75 C55 ~ +125 ratings symbol parameter conditions unit 40 30 8 0.2 limits min typ max v ma v v symbol unit 40 80 25 70 0.85 200 100 170 1.7 symbol unit parameter test conditions limits min typ + max mv + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. ns ns 65 1200 symbol unit parameter test conditions limits min typ max timing diagram note 1 test circuit collector-emitter voltage collector current input voltage power dissipation operating temperature storage temperature v ceo i c v i p d t opr t stg output, h current per circuit output, l ta = 25 c, when mounted on board v o i c v ih v il output voltage collector current h input voltage l input voltage i ceo = 100 m a v i = 2v, i c = 10ma v i = 2.5v, i c = 30ma v i = 2.5v v ce = 4v, i c = 30ma, ta = 25 c v (br) ceo i i h fe collector-emitter breakdown voltage input current dc amplification factor collector-emitter saturation voltage v ce (sat) t on t off turn-on time turn-off time c l = 15pf (note 1) recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) switching characteristics (unless otherwise noted, ta = 25 c) pg 50 w (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v p = 2.5v p-p (2) output conditions : r l = 300 w , v o = 10v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes c l r l measured device input v o output ton 50% 50% 50% input output 50% toff
aug. 1999 mitsubishi semiconductor m54513p/fp 8-unit 50ma transistor array 0 1 ta = 25? ta = 75? ta = ?0? 2 3 4 5 0 246810 thermal derating factor characteristics ambient temperature ta (?) M54513FP m54513p power dissipation pd (w) output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) 0 0 10 20 v i = 2v ta = ?0? ta = 25? ta = 75? 30 40 50 0.05 0.10 0.15 0.20 collector current ic (ma) dc amplification factor collector current characteristics collector current ic (ma) 10 0 10 2 v ce = 4v ta = 25? ta = 75? ta = ?0? 5 3 2 7 5 3 2 7 10 3 10 2 10 1 23 57 23 57 10 1 dc amplification factor h fe grounded emitter transfer characteristics input voltage v i (v) 0 10 v ce = 4v ta = 25? ta = 75? ta = ?0? 20 30 40 50 0 0.5 1.0 1.5 2.0 collector current ic (ma) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 input characteristics input voltage v i (v) input current i i (ma) typical characteristics
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